| PART |
Description |
Maker |
| M59MR032-GCT M59MR032D120ZC6T M59MR032C100GC6T M59 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
意法半导
|
| M58MR032C M58MR032C100ZC6T M58MR032C120ZC6T M58MR0 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29DW323DT70N6 M29DW323DT70N6E M29DW323DT70ZA6E M2 |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 8:24, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29DW324DB70N6E M29DW324DB70ZE6E M29DW324DT70N6 M2 |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 16:16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M58MR032-ZCT M58MR032C120ZC6T M58MR032D120ZC6T M58 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 32兆位Mb x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN
Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双24分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
SGS Thomson Microelectronics
|
| M58WR032F-ZB M58WR032F-ZBE M58WR032F-ZBF M58WR032F |
32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
32 Mbit (2Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36DR432BD85ZA6T M36DR432AD12ZA6T M36DR432AD85ZA6T |
PS MEDICAL SWITCHING 5V 8A 32兆位Mb x16插槽，双行，页闪存和4兆位56Kb x16的SRAM，多个存储产
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和4兆位56Kb x16的SRAM，多个存储产
PS MEDICAL SWITCHING 24V 1.7A 32兆位Mb x16插槽，双行，页闪存和4兆位56Kb x16的SRAM，多个存储产
|
意法半导
STMicroelectronics N.V.
|
| M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
STMicroelectronics N.V.
意法半导
|
| M58CR064-ZBT M58CR064Q90ZB6T M58CR064CZB M58CR064D |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的16，双行，突发1.8V电源快闪记忆
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
64 MBIT (4MB X16, DUAL BANK, BURST) 1.8V SUPPLY FLASH MEMORY
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
